STHU36N60DM6AG
STMicroelectronics
STMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 600 V
$6.77
Available to order
Reference Price (USD)
1+
$6.77000
500+
$6.7023
1000+
$6.6346
1500+
$6.5669
2000+
$6.4992
2500+
$6.4315
Exquisite packaging
Discount
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Meet the STHU36N60DM6AG by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The STHU36N60DM6AG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: HU3PAK
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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