STL13NM60N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 10A PWRFLAT HV
$3.59
Available to order
Reference Price (USD)
3,000+
$1.79949
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the STL13NM60N by STMicroelectronics, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the STL13NM60N is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 385mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 90W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (8x8) HV
- Package / Case: 8-PowerVDFN
Related Products
IXYS
IXTU4N70X2
Renesas
RQA0002DNSTB-E
Diodes Incorporated
DMG3414UQ-13
Diodes Incorporated
DMP3035SFG-7
Micro Commercial Co
SIL2305B-TP
Diodes Incorporated
DMTH8008SFGQ-13
onsemi
NVMFS4C308NWFT1G
Renesas Electronics America Inc
2SJ356-T1-AZ
Infineon Technologies
IPF041N10NF2SATMA1
Renesas Electronics America Inc