STP4NB80
STMicroelectronics
STMicroelectronics
MOSFET N-CH 800V 4A TO220AB
$0.00
Available to order
Reference Price (USD)
1,000+
$1.30790
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STP4NB80 from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's STP4NB80 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
NXP USA Inc.
PHP110NQ06LT,127
onsemi
FDD5612
Infineon Technologies
AUIRFS3207Z
Rohm Semiconductor
R6076ENZ1C9
Fairchild Semiconductor
FQB2P40TM
onsemi
FDC602P_F095
STMicroelectronics
STB5N52K3
Alpha & Omega Semiconductor Inc.
AO4476A_103
Vishay Siliconix
IRL510STRR
Infineon Technologies