Shopping cart

Subtotal: $0.00

STP6NB90

STMicroelectronics
STP6NB90 Preview
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220AB
$0.00
Available to order
Reference Price (USD)
500+
$1.91730
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

Related Products

Infineon Technologies

IRL3714LPBF

Renesas Electronics America Inc

RJK2557DPA-00#J0

Infineon Technologies

SPB07N60C3ATMA1

Alpha & Omega Semiconductor Inc.

AON7408L

Fairchild Semiconductor

FDB8878

Toshiba Semiconductor and Storage

TPCC8067-H,LQ(S

Rohm Semiconductor

RSH110N03TB1

STMicroelectronics

STL9P2UH7

Infineon Technologies

IRFH5025TR2PBF

Top