STU10N60M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
$1.60
Available to order
Reference Price (USD)
1+
$1.87000
75+
$1.49387
150+
$1.30707
525+
$1.01366
1,050+
$0.80025
2,550+
$0.74690
5,025+
$0.70955
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STU10N60M2 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STU10N60M2 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Fairchild Semiconductor
FDPF10N50UT
Alpha & Omega Semiconductor Inc.
AOSP32368
Vishay Siliconix
SIHU6N65E-GE3
Vishay Siliconix
SI7172ADP-T1-RE3
Infineon Technologies
IRL2910STRLPBF
Taiwan Semiconductor Corporation
TSM7P06CP ROG
Vishay Siliconix
SQP120N10-3M8_GE3
onsemi
HUF76609D3ST
Vishay Siliconix
IRFR210PBF
Rohm Semiconductor