SUD35N10-26P-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 12A/35A DPAK
$2.28
Available to order
Reference Price (USD)
1+
$2.28000
500+
$2.2572
1000+
$2.2344
1500+
$2.2116
2000+
$2.1888
2500+
$2.166
Exquisite packaging
Discount
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Optimize your power electronics with the SUD35N10-26P-BE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SUD35N10-26P-BE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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