TK11A65W,S5X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 11.1A TO220SIS
$1.60
Available to order
Reference Price (USD)
1+
$2.06000
50+
$1.65760
100+
$1.49180
500+
$1.16026
1,000+
$0.96135
2,500+
$0.92820
Exquisite packaging
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Discover the TK11A65W,S5X from Toshiba Semiconductor and Storage, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TK11A65W,S5X ensures reliable performance in demanding environments. Upgrade your circuit designs with Toshiba Semiconductor and Storage's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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