RM2306E
Rectron USA
Rectron USA
MOSFET N-CHANNEL 30V 5.3A SOT23
$0.06
Available to order
Reference Price (USD)
1+
$0.05500
500+
$0.05445
1000+
$0.0539
1500+
$0.05335
2000+
$0.0528
2500+
$0.05225
Exquisite packaging
Discount
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The RM2306E from Rectron USA sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rectron USA's RM2306E for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 6.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.39W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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