TK14E65W,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 13.7A TO220
$2.72
Available to order
Reference Price (USD)
1+
$3.06000
50+
$2.47000
100+
$2.22300
500+
$1.72900
1,000+
$1.43260
2,500+
$1.38320
Exquisite packaging
Discount
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Optimize your power electronics with the TK14E65W,S1X single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TK14E65W,S1X combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 690µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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