TK160F10N1L,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 160A TO220SM
$1.48
Available to order
Reference Price (USD)
1,000+
$1.34270
Exquisite packaging
Discount
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Meet the TK160F10N1L,LQ by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TK160F10N1L,LQ stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220SM(W)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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