TK20E60W,S1VX
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 20A TO220
$4.34
Available to order
Reference Price (USD)
50+
$3.94880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the TK20E60W,S1VX single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's TK20E60W,S1VX for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
FDMC6679AZ
Fairchild Semiconductor
FQD1N60TF
Vishay Siliconix
SIJA52DP-T1-GE3
Toshiba Semiconductor and Storage
TK9J90E,S1E
STMicroelectronics
STFI10N62K3
onsemi
ATP404-TL-H
Taiwan Semiconductor Corporation
TSM60N380CZ C0G
onsemi
FDMS86320
Panjit International Inc.
PJD85N03-AU_L2_000A1
onsemi