TK210V65Z,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 15A 5DFN
$2.78
Available to order
Reference Price (USD)
1+
$2.78000
500+
$2.7522
1000+
$2.7244
1500+
$2.6966
2000+
$2.6688
2500+
$2.641
Exquisite packaging
Discount
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Enhance your electronic projects with the TK210V65Z,LQ single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's TK210V65Z,LQ for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 610µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN-EP (8x8)
- Package / Case: 4-VSFN Exposed Pad
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