TK32A12N1,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 120V 32A TO220SIS
$1.46
Available to order
Reference Price (USD)
1+
$1.41000
50+
$1.12840
100+
$0.98740
500+
$0.76570
1,000+
$0.60450
2,500+
$0.56420
Exquisite packaging
Discount
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Optimize your power electronics with the TK32A12N1,S4X single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TK32A12N1,S4X combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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