TK40P03M1(T6RSS-Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 40A DP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the TK40P03M1(T6RSS-Q) by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TK40P03M1(T6RSS-Q) is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
RTR025N03TL
Infineon Technologies
BSC042NE7NS3G
IXYS
IXFH12N120
onsemi
NTF3055L108T3G
Infineon Technologies
BS7067N06LS3G
onsemi
NTB45N06T4G
IXYS
IXTY4N60P
Vishay Siliconix
SIA438EDJ-T1-GE3
Infineon Technologies
IPP100N06S3L-04
Taiwan Semiconductor Corporation