TK4R1A10PL,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$2.14
Available to order
Reference Price (USD)
1+
$2.14000
500+
$2.1186
1000+
$2.0972
1500+
$2.0758
2000+
$2.0544
2500+
$2.033
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK4R1A10PL,S4X from Toshiba Semiconductor and Storage redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the TK4R1A10PL,S4X offers the precision and reliability you need. Trust Toshiba Semiconductor and Storage to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Central Semiconductor Corp
2N7002 TR PBFREE
STMicroelectronics
STW26N65DM2
IXYS
IXTQ32N65X
STMicroelectronics
STU6N95K5
Infineon Technologies
IPD60N10S4L12ATMA1
Vishay Siliconix
SIHP080N60E-GE3
Infineon Technologies
IPB80P04P4L06ATMA2
Fairchild Semiconductor
FQP5N50C
Diodes Incorporated
DMP2045U-7
Nexperia USA Inc.