TP65H035WSQA
Transphorm
Transphorm
GANFET N-CH 650V 47.2A TO247-3
$23.20
Available to order
Reference Price (USD)
1+
$21.76000
10+
$19.78000
25+
$18.29640
100+
$16.81300
250+
$15.32952
500+
$14.34050
Exquisite packaging
Discount
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Upgrade your designs with the TP65H035WSQA by Transphorm, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TP65H035WSQA is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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