TP65H070LSG
Transphorm
Transphorm
GANFET N-CH 650V 25A 3PQFN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TP65H070LSG by Transphorm is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TP65H070LSG is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PQFN (8x8)
- Package / Case: 3-PowerDFN
Related Products
Infineon Technologies
BTS282ZAKSA1
onsemi
ATP104-TL-H
Alpha & Omega Semiconductor Inc.
AO4405
Alpha & Omega Semiconductor Inc.
AO4423L
Vishay Siliconix
SI7356ADP-T1-GE3
Infineon Technologies
IPW50R190CEFKSA1
IXYS
IXTK33N50
IXYS
IXFH32N50Q
Infineon Technologies
IRLZ34NSPBF
Infineon Technologies