TPC6107(TE85L,F,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 4.5A VS-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TPC6107(TE85L,F,M) by Toshiba Semiconductor and Storage is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TPC6107(TE85L,F,M) is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-6 (2.9x2.8)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Rohm Semiconductor
RZR040P01TL
Alpha & Omega Semiconductor Inc.
AON6428_103
STMicroelectronics
STB11NM60-1
Vishay Siliconix
SI3475DV-T1-GE3
Infineon Technologies
IRF540NL
Infineon Technologies
SPI02N65C3
Rohm Semiconductor
RP1E075RPTR
Rohm Semiconductor
SCT2160KEC
STMicroelectronics
STF8NM60N
onsemi