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TPC6113(TE85L,F,M)

Toshiba Semiconductor and Storage
TPC6113(TE85L,F,M) Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 5A VS-6
$0.00
Available to order
Reference Price (USD)
3,000+
$0.22785
Exquisite packaging
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-6 (2.9x2.8)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6

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