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TPCP8003-H(TE85L,F

Toshiba Semiconductor and Storage
TPCP8003-H(TE85L,F Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 2.2A PS-8
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PS-8 (2.9x2.4)
  • Package / Case: 8-SMD, Flat Lead

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