TPH3205WSB
Transphorm
Transphorm
GANFET N-CH 650V 36A TO247-3
$0.00
Available to order
Reference Price (USD)
1+
$22.40000
10+
$20.72000
25+
$19.04000
180+
$17.69600
360+
$16.24000
540+
$15.68000
Exquisite packaging
Discount
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Enhance your electronic projects with the TPH3205WSB single MOSFET from Transphorm. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Transphorm's TPH3205WSB for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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