TPH3206PD
Transphorm
Transphorm
GANFET N-CH 600V 17A TO220AB
$11.26
Available to order
Reference Price (USD)
1+
$10.75000
10+
$9.67500
50+
$8.81500
100+
$7.95500
250+
$7.31000
500+
$6.66500
1,000+
$6.02000
Exquisite packaging
Discount
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Discover the TPH3206PD from Transphorm, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TPH3206PD ensures reliable performance in demanding environments. Upgrade your circuit designs with Transphorm's cutting-edge technology today.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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