TPHR9003NL1,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=78W F=1MHZ
$1.69
Available to order
Reference Price (USD)
1+
$1.69000
500+
$1.6731
1000+
$1.6562
1500+
$1.6393
2000+
$1.6224
2500+
$1.6055
Exquisite packaging
Discount
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Upgrade your designs with the TPHR9003NL1,LQ by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TPHR9003NL1,LQ is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 170W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
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