TRS12N65FB,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SIC SBD TO-247 V=650 IF=12A
$5.30
Available to order
Reference Price (USD)
1+
$5.30000
500+
$5.247
1000+
$5.194
1500+
$5.141
2000+
$5.088
2500+
$5.035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For engineers specializing in power electronics, the TRS12N65FB,S1Q by Toshiba Semiconductor and Storage represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Toshiba Semiconductor and Storage's patented junction design, the TRS12N65FB,S1Q achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 650 V
- Operating Temperature - Junction: 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
onsemi
SBE805-TL-W
Vishay General Semiconductor - Diodes Division
VS-42CTQ030STRRHM3
GeneSiC Semiconductor
MURTA40040R
SMC Diode Solutions
409DMQ150
Vishay General Semiconductor - Diodes Division
VS-10CSH01-M3/87A
SMC Diode Solutions
MBRB1060CT
Vishay General Semiconductor - Diodes Division
SS8P6CHM3_A/I
Vishay General Semiconductor - Diodes Division
VS-12CWQ04FNTRR-M3
Central Semiconductor Corp
CMPD6263S TR PBFREE
Powerex Inc.