TRS24N65FB,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SIC SBD TO-247 V=650 IF=12A
$8.17
Available to order
Reference Price (USD)
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$8.17000
500+
$8.0883
1000+
$8.0066
1500+
$7.9249
2000+
$7.8432
2500+
$7.7615
Exquisite packaging
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For engineers specializing in power electronics, the TRS24N65FB,S1Q by Toshiba Semiconductor and Storage represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Toshiba Semiconductor and Storage's patented junction design, the TRS24N65FB,S1Q achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Operating Temperature - Junction: 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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