TRS6E65F,S1Q
Toshiba Semiconductor and Storage
        
                
                                Toshiba Semiconductor and Storage                            
                        
                                DODE SCHOTTKY 650V TO220                            
                        $2.94
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $2.94000
                                        500+
                                            $2.9106
                                        1000+
                                            $2.8812
                                        1500+
                                            $2.8518
                                        2000+
                                            $2.8224
                                        2500+
                                            $2.793
                                        Exquisite packaging
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                    The TRS6E65F,S1Q by Toshiba Semiconductor and Storage is a top-tier single rectifier diode designed for high-efficiency power conversion. Belonging to the Diodes - Rectifiers - Single category, it features ultra-fast recovery times and minimal power dissipation, making it perfect for switch-mode power supplies and DC-DC converters. Its versatile applications span industrial motor drives, solar inverters, and consumer electronics, where consistent performance is essential. Engineered for durability, the TRS6E65F,S1Q ensures long-term reliability even in harsh operating conditions. Trust Toshiba Semiconductor and Storage for cutting-edge semiconductor solutions that drive innovation.                
            Specifications
- Product Status: Active
 - Diode Type: Silicon Carbide Schottky
 - Voltage - DC Reverse (Vr) (Max): 650 V
 - Current - Average Rectified (Io): 6A (DC)
 - Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
 - Speed: No Recovery Time > 500mA (Io)
 - Reverse Recovery Time (trr): 0 ns
 - Current - Reverse Leakage @ Vr: 30 µA @ 650 V
 - Capacitance @ Vr, F: 22pF @ 650V, 1MHz
 - Mounting Type: Through Hole
 - Package / Case: TO-220-2
 - Supplier Device Package: TO-220-2L
 - Operating Temperature - Junction: 175°C (Max)
 
