TSM061NA03CV RGG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 66A 8PDFN
$0.00
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Reference Price (USD)
10,000+
$0.48034
Exquisite packaging
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Meet the TSM061NA03CV RGG by Taiwan Semiconductor Corporation, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TSM061NA03CV RGG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Taiwan Semiconductor Corporation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.1mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 44.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3.1x3.1)
- Package / Case: 8-PowerWDFN
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