TSM16ND50CI C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 500V 16A ITO220
$3.38
Available to order
Reference Price (USD)
1+
$3.37680
500+
$3.343032
1000+
$3.309264
1500+
$3.275496
2000+
$3.241728
2500+
$3.20796
Exquisite packaging
Discount
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Meet the TSM16ND50CI C0G by Taiwan Semiconductor Corporation, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TSM16ND50CI C0G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Taiwan Semiconductor Corporation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 59.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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