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TSM60NC1R5CH C5G

Taiwan Semiconductor Corporation
TSM60NC1R5CH C5G Preview
Taiwan Semiconductor Corporation
600V, 3A, SINGLE N-CHANNEL POWER
$3.08
Available to order
Reference Price (USD)
1+
$3.08000
500+
$3.0492
1000+
$3.0184
1500+
$2.9876
2000+
$2.9568
2500+
$2.926
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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