IMW65R039M1HXKSA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
$19.90
Available to order
Reference Price (USD)
1+
$19.90000
500+
$19.701
1000+
$19.502
1500+
$19.303
2000+
$19.104
2500+
$18.905
Exquisite packaging
Discount
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Upgrade your designs with the IMW65R039M1HXKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IMW65R039M1HXKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
- Vgs (Max): +20V, -2V
- Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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