TTC004B,Q
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
TRANS NPN 160V 1.5A TO126N
$0.54
Available to order
Reference Price (USD)
1+
$0.58000
10+
$0.49100
25+
$0.43000
100+
$0.36860
250+
$0.31940
500+
$0.27028
1,000+
$0.20885
2,500+
$0.19042
5,000+
$0.17813
Exquisite packaging
Discount
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The TTC004B,Q by Toshiba Semiconductor and Storage is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the TTC004B,Q ensures efficient and stable operation. Backed by Toshiba Semiconductor and Storage's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 10 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126N