TTC012(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 375V 2A PW-MOLD2
$0.00
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Reference Price (USD)
200+
$0.76145
Exquisite packaging
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Upgrade your electronic designs with the TTC012(Q) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the TTC012(Q) is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Toshiba Semiconductor and Storage for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 375 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
- Power - Max: 1.1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: PW-MOLD2
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