TW048N65C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 650V SIC-MOSFET TO-247 48MOH
$17.09
Available to order
Reference Price (USD)
1+
$17.09000
500+
$16.9191
1000+
$16.7482
1500+
$16.5773
2000+
$16.4064
2500+
$16.2355
Exquisite packaging
Discount
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Meet the TW048N65C,S1F by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TW048N65C,S1F stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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