UF3SC065007K4S
UnitedSiC
UnitedSiC
MOSFET N-CH 650V 120A TO247-4
$81.03
Available to order
Reference Price (USD)
1+
$81.03000
500+
$80.2197
1000+
$79.4094
1500+
$78.5991
2000+
$77.7888
2500+
$76.9785
Exquisite packaging
Discount
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The UF3SC065007K4S from UnitedSiC sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to UnitedSiC's UF3SC065007K4S for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 789W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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