UJ4C075023K4S
UnitedSiC
UnitedSiC
750V/23MOHM, SIC, CASCODE, G4, T
$16.45
Available to order
Reference Price (USD)
1+
$16.45000
500+
$16.2855
1000+
$16.121
1500+
$15.9565
2000+
$15.792
2500+
$15.6275
Exquisite packaging
Discount
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Meet the UJ4C075023K4S by UnitedSiC, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The UJ4C075023K4S stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose UnitedSiC.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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