ULN2004APG,C,N
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IC PWR RELAY 7NPN 1:1 16DIP
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Precision meets power in the ULN2004APG,C,N BJT Array by Toshiba Semiconductor and Storage. Specifically engineered for Class-B audio amplifiers and active filters, this Discrete Semiconductor Product delivers THD<0.1% for studio-grade sound reproduction. Telecommunications infrastructure and test equipment manufacturers rely on its stable beta characteristics across temperature ranges. The ULN2004APG,C,N comes with anti-oxidation terminals, ensuring solderability even after prolonged storage.
Specifications
- Product Status: Obsolete
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: 1.47W
- Frequency - Transition: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
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