UNR412300A
Panasonic Electronic Components
Panasonic Electronic Components
TRANS PREBIAS PNP 300MW NS-B1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with Panasonic Electronic Components's UNR412300A, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Panasonic Electronic Components delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 200 MHz
- Power - Max: 300 mW
- Mounting Type: Through Hole
- Package / Case: 3-SSIP
- Supplier Device Package: NS-A1
Related Products
Panasonic Electronic Components
DRA2123Y0L
Diodes Incorporated
DDTC123EKA-7-F
Panasonic Electronic Components
UNR521FG0L
Infineon Technologies
BCR 191F E6327
NXP USA Inc.
PDTA114TS,126
Panasonic Electronic Components
UNR511VG0L
NXP USA Inc.
PDTA323TK,115
Infineon Technologies
BCR 199T E6327
Toshiba Semiconductor and Storage
RN2105CT(TPL3)
NXP USA Inc.