2SC5632G0L
Panasonic Electronic Components

Panasonic Electronic Components
RF TRANS NPN 8V 1.1GHZ SMINI3-F2
$0.16
Available to order
Reference Price (USD)
1+
$0.16000
500+
$0.1584
1000+
$0.1568
1500+
$0.1552
2000+
$0.1536
2500+
$0.152
Exquisite packaging
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The 2SC5632G0L by Panasonic Electronic Components is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the 2SC5632G0L from Panasonic Electronic Components, a leader in semiconductor innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2