US6M1TR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N/P-CH 30V/20V TUMT6
$0.71
Available to order
Reference Price (USD)
3,000+
$0.22940
6,000+
$0.21460
15,000+
$0.20720
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The US6M1TR from Rohm Semiconductor is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the US6M1TR provides reliable performance in demanding environments. Choose Rohm Semiconductor for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
- Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: TUMT6
Related Products
onsemi
NTZD3154NT5G
Diodes Incorporated
DMN2011UFX-7
Sanyo
2SK4086LS-MG5
Microchip Technology
APTM10HM19FT3G
onsemi
NTMS4503NR2G-001
Alpha & Omega Semiconductor Inc.
AON6996
Nexperia USA Inc.
BUK9K134-100EX
Vishay Siliconix
SIA517DJ-T1-GE3
Panjit International Inc.
PJS6602_S2_00001
Diodes Incorporated