US6T4TR
Rohm Semiconductor
Rohm Semiconductor
TRANS PNP 12V 3A TUMT6
$0.00
Available to order
Reference Price (USD)
3,000+
$0.17360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The US6T4TR Bipolar Junction Transistor (BJT) by Rohm Semiconductor is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the US6T4TR provides consistent performance in demanding applications. Choose Rohm Semiconductor for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 280MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: TUMT6
Related Products
Panasonic Electronic Components
2SB10630P
Micro Commercial Co
TIP30C-BP
Rohm Semiconductor
2SB1189T100Q
Fairchild Semiconductor
KSC900LTA
onsemi
S1JVNJD2873T4G
STMicroelectronics
BDX54B
Micro Commercial Co
TIP115-BP
Panasonic Electronic Components
2SC39400RA
Bourns Inc.
BD646-S
Panasonic Electronic Components