V10P6-M3/86A
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 4.3A TO277A
$0.81
Available to order
Reference Price (USD)
1,500+
$0.35868
3,000+
$0.32928
7,500+
$0.31948
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the V10P6-M3/86A single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the V10P6-M3/86A delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Vishay General Semiconductor - Diodes Division's V10P6-M3/86A is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 4.3A
- Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.9 mA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
Related Products
Microchip Technology
1N5711-1
Vishay General Semiconductor - Diodes Division
MSX1PJHM3/89A
Taiwan Semiconductor Corporation
ES2D R5G
Microsemi Corporation
JANTXV1N6624U
Renesas Electronics America Inc
1SS286TD-E
Vishay General Semiconductor - Diodes Division
RMPG06GHE3_A/100
onsemi
NSR20F30NXT5G
Panjit International Inc.
MBR1020VL-AU_R1_000A1
STMicroelectronics
FERD30H100SB-TR
UnitedSiC