VMO550-01F
IXYS
IXYS
MOSFET N-CH 100V 590A Y3-DCB
$366.29
Available to order
Reference Price (USD)
2+
$163.64500
Exquisite packaging
Discount
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The VMO550-01F by IXYS is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose IXYS for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 590A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 6V @ 110mA
- Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2200W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Y3-DCB
- Package / Case: Y3-DCB
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