VMO650-01F
IXYS
IXYS
MOSFET N-CH 100V 690A Y3-DCB
$213.35
Available to order
Reference Price (USD)
1+
$190.63000
10+
$181.42900
25+
$174.85520
Exquisite packaging
Discount
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The VMO650-01F from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the VMO650-01F offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 690A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 6V @ 130mA
- Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2500W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Y3-DCB
- Package / Case: Y3-DCB
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