Shopping cart

Subtotal: $0.00

VP2206N3-G-P003

Microchip Technology
VP2206N3-G-P003 Preview
Microchip Technology
MOSFET P-CH 60V 640MA TO92-3
$2.78
Available to order
Reference Price (USD)
2,000+
$1.54500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Related Products

STMicroelectronics

STD13N65M2

Fairchild Semiconductor

FDMC7672

Infineon Technologies

IPD50R500CEBTMA1

STMicroelectronics

STD95N4F3

Infineon Technologies

IRF4905PBF

Rohm Semiconductor

RJ1P12BBDTLL

Renesas Electronics America Inc

2SK3107-T1-A

Infineon Technologies

IPW60R165CPFKSA1

Vishay Siliconix

SISA14DN-T1-GE3

PN Junction Semiconductor

P3M171K2K3

Top