Shopping cart

Subtotal: $0.00

VS-8EWF06STR-M3

Vishay General Semiconductor - Diodes Division
VS-8EWF06STR-M3 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A D-PAK
$3.56
Available to order
Reference Price (USD)
2,000+
$1.99154
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C

Related Products

Power Integrations

LXA04B600

Infineon Technologies

BAT5402LRHE6327XTSA1

Taiwan Semiconductor Corporation

S3AB R5G

Vishay General Semiconductor - Diodes Division

MUR440-E3/73

Microchip Technology

JANTXV1N6620/TR

Microchip Technology

1N5807US/TR

Panjit International Inc.

MBR20H150YD_L2_00001

Vishay General Semiconductor - Diodes Division

FESB16AT-E3/81

Vishay General Semiconductor - Diodes Division

ES1D-M3/5AT

Top