VS-E5TH0812-M3

Vishay General Semiconductor - Diodes Division

Manufacturer

Vishay General Semiconductor - Diodes Division

Description:

8A, 1200V, "H" SERIES FRED PT IN

Datasheet:

VS-E5TH0812-M3 Datasheet

$1.39

Available to order

Reference Price (USD)

$1.39000

500+

$1.3761

1000+

$1.3622

1500+

$1.3483

2000+

$1.3344

2500+

$1.3205

Exquisite packaging

Discount

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Discover the VS-E5TH0812-M3 single rectifier diode by Vishay General Semiconductor - Diodes Division, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The VS-E5TH0812-M3 is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Vishay General Semiconductor - Diodes Division's VS-E5TH0812-M3 for unmatched quality and performance in discrete semiconductor solutions.

Specifications

Product Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

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VS-E5TH0812-M3

Reference Price (USD)

Specifications

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