VS-EMG050J60N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 88A 338W EMIPAK2
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The VS-EMG050J60N from Vishay General Semiconductor - Diodes Division exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the VS-EMG050J60N in megawatt-level wind turbine converters. With Vishay General Semiconductor - Diodes Division's proven track record, the VS-EMG050J60N represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 88 A
- Power - Max: 338 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK2
- Supplier Device Package: EMIPAK2
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