VS-ETF150Y65N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 650V 201A 600W
$68.56
Available to order
Reference Price (USD)
1+
$71.99000
10+
$68.38900
25+
$66.58880
100+
$61.63970
Exquisite packaging
Discount
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The VS-ETF150Y65N from Vishay General Semiconductor - Diodes Division exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the VS-ETF150Y65N in megawatt-level wind turbine converters. With Vishay General Semiconductor - Diodes Division's proven track record, the VS-ETF150Y65N represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 201 A
- Power - Max: 600 W
- Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 150A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 175°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module
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