FP50R12W2T7B11BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY
$76.78
Available to order
Reference Price (USD)
1+
$76.78000
500+
$76.0122
1000+
$75.2444
1500+
$74.4766
2000+
$73.7088
2500+
$72.941
Exquisite packaging
Discount
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The FP50R12W2T7B11BOMA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FP50R12W2T7B11BOMA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FP50R12W2T7B11BOMA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
- Current - Collector Cutoff (Max): 8 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2B-2
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