MUBW35-12A8
IXYS
IXYS
IGBT MODULE 1200V 50A 225W E3
$0.00
Available to order
Reference Price (USD)
5+
$73.50800
Exquisite packaging
Discount
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The MUBW35-12A8 from IXYS exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the MUBW35-12A8 in megawatt-level wind turbine converters. With IXYS's proven track record, the MUBW35-12A8 represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 225 W
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 35A
- Current - Collector Cutoff (Max): 1.1 mA
- Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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